Transistor Performance and Electron Transport Properties of High Performance InAs Quantum-Well FET's

Abstract

A novel field-effect transistor based on a pseudomorphic InAs quantum well in a doped InGaAs/InAlAs double heterostructure is reported. Low-field mobility, electron peak velocity, and transistor performance are studied as functions of InAs quantum well thickness, where the InAs layer is in the center of a 300-A uniformly doped InGaAs/InAlAs quantum well lattice matched to InP. Electron transport-both at low and high fields-along with transistor transconductance are optimal for structures with a 30-A. InAs quantum well. Transistors based on the InAs quantum well structures with 0.5-µm gate lengths yielded room temperature extrinsic transconductances of 708 mS/mm, more than a 100% increase over those with no InAs. © 1994 IEEE