Hydrogen induced interfacial polarization at PdSiO₂ interfaces

Abstract

Internal photoemission experiments were performed to study the polarization layer induced by hydrogen at PdSiO2 interfaces. It was found that this polarization layer behaves like a true dipole layer where one monolayer of hydrogen atoms at the interface corresponds to a barrier lowering of 0.5 eV in accordance with earlier measurements on threshold voltage shifts of Pd-SiO2 -Si field effect transistors. Furthermore experiments on AlSiO2 structures indicate that the catalytic dissociation of H2 on metals like Pd and Pt is necessary for the introduction of a hydrogen polarization layer at a metal-SiO2 interface. © 1976.