Thermal oxidation of silicon: New experimental results and models

Abstract

Most studies of Si oxidation commence with a discussion of the linear-parabolic oxidation model developed by a number of workers in the 1960's. The limits of the model are pure diffusion of oxidant for thick SiO2 films and a surface reaction limitation for thin films. The steady state picture of this series reaction scheme is discussed and used to explain new experimental results. New data relevant to Si oxidation is presented on the following subjects: five orientations of Si; photonic excitement; intrinsic film stress; silicide oxidation. The role of electrons on the oxidation kinetics is elucidated. A thermionic emission model for the initial stages of oxidation is proposed. © 1987.