THIN FILM DEPOSITION TECHNIQUES IN MICROELECTRONICS.

Abstract

This paper reviews physical and chemical vapor deposition techniques for thin film preparation in semiconductor manufacture. The choice of deposition technique for a given application is determined by the properties of the films desired, the cost or production rate available from the process, temperature limitations of the substrates, uniformity or consistency of the process and its compatibility with preceding and subsequent processing steps. In some cases, thin films deposited in one form are converted to a different form or material in a subsequent processing step, as in the case of silicide formation. A comparison survey of techniques for preparation of silicide films for metallization and dielectric films for passivation is also given.