POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Gosele
- 1983
- ECS Meeting 1983
Publications
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18 results for U. Gösele
Nanowire-based one-dimensional electronics
- C. Thelander
- P. Agarwal
- et al.
- 2006
- Materials Today
Realization of a silicon nanowire vertical surround-gate field-effect transistor
- Volker Schmidt
- Heike Riel
- et al.
- 2005
- Small
Transfer of semiconductor and oxide films by wafer bonding and layer cutting
- Qin-Yi Tong
- Li-Juan Huang
- et al.
- 2000
- Journal of Electronic Materials
Metastability in slow thin-film reactions
- K.N. Tu
- S.R. Herd
- et al.
- 1991
- Physical Review B
"Critical thickness" of amorphous phase formation in binary diffusion couples
- U. Gösele
- K.N. Tu
- 1989
- Journal of Applied Physics
Point defects, diffusion processes, and swirl defect formation in silicon
- T.Y. Tan
- U. Gösele
- 1985
- Applied Physics A Solids and Surfaces
Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system
- K.N. Tu
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon
- F.F. Morehead
- N.A. Stolwijk
- et al.
- 1983
- Applied Physics Letters
On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon
- T.Y. Tan
- U. Gösele
- et al.
- 1983
- Applied Physics A Solids and Surfaces