Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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11 results for B.G. Svensson

Electrical properties of copper-silicon Schottky barriers
- - M.O. Aboelfotoh
  - B.G. Svensson
- 1999
- Semiconductor Science and Technology
Electrically active point defects in n-type 4H-SiC
- - J. Doyle
  - M.K. Linnarsson
  - et al.
- 1998
- Journal of Applied Physics
Copper diffusion in amorphous germanium
- - J. Doyle
  - A.Yu. Kuznetsov
  - et al.
- 1998
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Observation of near-surface electrically active defects in n-type 6H-SiC
- - J. Doyle
  - A. Schöner
  - et al.
- 1998
- Journal of Applied Physics
On the formation of epitaxial CoSi₂ from the reaction of Si with a Co/Ti bilayer
- - S.-L. Zhang
  - J. Cardenas
  - et al.
- 1995
- Applied Physics Letters
Effect of interfacial hydrogen in CoSi₂/Si(100) Schottky-barrier contacts
- - M.O. Aboelfotoh
  - A.D. Marwick
  - et al.
- 1993
- ICDS 1993
Interaction between copper and point defects in proton-irradiated silicon
- - S. Tamulevicius
  - B.G. Svensson
  - et al.
- 1992
- Journal of Applied Physics
Copper passivation of boron in silicon and boron reactivation kinetics
- - M.O. Aboelfotoh
  - B.G. Svensson
- 1991
- Physical Review B
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- - H. Weman
  - J.L. Lindström
  - et al.
- 1990
- Journal of Applied Physics
Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon
- - M.O. Aboelfotoh
  - A. Cros
  - et al.
- 1990
- Physical Review B