Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
- Vishal A. Tiwari
- Young Way Teh
- et al.
- 2015
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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5 results for Vishal A. Tiwari
Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET
- Vishal A. Tiwari
- Ch. L. N. Pavan
- et al.
- 2016
- ICEE 2016
Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET
- Vishal A. Tiwari
- Andreas Scholze
- et al.
- 2014
- ICEE 2014
OFF-State Leakage and Performance Variations Associated with Germanium Preamorphization Implant in Silicon-Germanium Channel pFET
- Vishal A. Tiwari
- Rama Divakaruni
- et al.
- 2018
- IEEE T-ED
Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages
- Vishal A. Tiwari
- Rama Divakaruni
- et al.
- 2016
- Japanese Journal of Applied Physics