Photoluminescence in heavily doped Si: B and Si: As
- P.E. Schmid
- M.L.W. Thewalt
- et al.
- 1981
- Solid State Communications
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26 results for W.P. Dumke
The Effect of Base Doping on the Performance of Si Bipolar Transistors at Low Temperatures
- William P. Dumke
- 1981
- IEEE T-ED
Minority carrier injection and storage into a heavily doped emitter. Approximate solution for auger recombination
- W.P. Dumke
- 1981
- Solid-State Electronics
On laser annealing and lattice melting
- W.P Dumke
- 1980
- "Physics Letters, Section A: General, Atomic and Solid State Physics"
The Angular Beam Divergence in Double-Heterojunction Lasers with Very Thin Active Regions
- W.P. Dumke
- 1975
- IEEE JQE
Current thresholds in stripe-contact injection lasers
- W.P. Dumke
- 1973
- Solid-State Electronics
Enhanced indirect optical absorption in AlAs and GaP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1972
- Physical Review B
GaAsGaAlAs heterojunction transistor for high frequency operation
- W.P. Dumke
- J. Woodall
- et al.
- 1972
- Solid-State Electronics
High-field conductivity of the 111 valleys of Ge
- W.P. Dumke
- 1970
- Physical Review B
Intra- and interband free-carrier absorption and the fundamental absorption edge in n-type InP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1970
- Physical Review B