Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

47 results for R.M. Potemski

High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- - Richard A. Kiehl
  - P.E. Hallali
  - et al.
- 1991
- IEEE Electron Device Letters
Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?
- - B. Monemar
  - R.M. Potemski
  - et al.
- 1978
- Physical Review Letters
Vertical cavity waveguide spectrometer for WDM communication
- - B. Pezeshki
  - F. Tong
  - et al.
- 1993
- LEOS 1993
Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)
- - M.B. Small
  - R.M. Potemski
- 1989
- Proceedings of SPIE 1989
The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System
- - M.B. Small
  - R. Ghez
  - et al.
- 2019
- JES
Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors
- - M.S. Goorsky
  - T.F. Kuech
  - et al.
- 2019
- JES
Epitaxial Growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a Hotwall Reactor
- - T.F. Kuech
  - M.A. Tischler
  - et al.
- 2019
- JES
Etch pits and dislocations in {100} GaAs wafers
- - J. Angilello
  - R.M. Potemski
  - et al.
- 2008
- Journal of Applied Physics
Meniscus lines as nucleation sites for the active layer of a double-heterostructure laser grown by LPE
- - M.B. Small
  - J.M. Blum
  - et al.
- 2008
- Applied Physics Letters
The formation of Ga_1-xAl_xAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions
- - M.B. Small
  - R. Ghez
  - et al.
- 2008
- Applied Physics Letters