Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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465 results at IEEE T-ED

Reduced gate-leakage current and charge trapping characteristics of dysprosium-incorporated HfO₂ gate-oxide n-MOS devices
- - Tackhwi Lee
  - Sanjay K. Banerjee
- 2011
- IEEE T-ED
On the high-field transport and uniaxial stress effect in Ge PFETs
- - Masaharu Kobayashi
  - Jérǒme Mitard
  - et al.
- 2011
- IEEE T-ED
Transistor mismatch properties in deep-submicrometer CMOS technologies
- - Xiaobin Yuan
  - Takashi Shimizu
  - et al.
- 2011
- IEEE T-ED
On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors
- - Siyuranga O. Koswatta
  - Steven J. Koester
  - et al.
- 2010
- IEEE T-ED
Comparative study of FinFET versus quasi-planar HTI MOSFET for ultimate scalability
- - Reinaldo A. Vega
  - Tsu-Jae King Liu
- 2010
- IEEE T-ED
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2010
- IEEE T-ED
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
- - Rajan K. Pandey
  - Kota V. R. M. Murali
  - et al.
- 2010
- IEEE T-ED
Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs
- - Amlan Majumdar
  - Christine Ouyang
  - et al.
- 2010
- IEEE T-ED
Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- - Gennadi Bersuker
  - Chang Seo Park
  - et al.
- 2010
- IEEE T-ED
Stress liner effects for 32-nm SOI MOSFETs with HKMG
- - Ming Cai
  - Karthik Ramani
  - et al.
- 2010
- IEEE T-ED